SiC Power Devices

SiC MOSFET for EV

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P/N Download

Package

TO-247-3 TO-247-4 TO-263-7

Vdss (V)

650 750 1200 1700

Rds(on) (mΩ)

9 13 15 20 23 30 40 75 80 140

Drain Current (A) Tc=25 ℃

19 33 37 50 60 62 66 81 92 100 125 133 158 190
Vgs(th) (V) (Typ.) Gate Charge Total Qg (nc) Total Power Dissipation PTOT (W) Junction Temperature TJ(MAX) (℃ )
NDS010106 TO-247-4 650 20 92 2.6 187 312 175
NDS010107 TO-247-4 650 30 66 2.6 110 187 175
NDS010118 TO-263-7 1200 20 100 2.6 237 468 175
NDS010104 TO-247-3 1200 40 62 2.6 112 269 175
NDS010112 TO-247-4 1200 40 62 2.6 112 269 175
NDS010116 TO-263-7 1200 40 62 2.6 112 269 175
NDS010057 TO-247-3 1200 75 33 2.6 103 136 175
NDS010064 TO-247-4 1200 75 33 2.6 103 136 175
NDS010070 TO-263-7 1200 75 33 2.6 103 136 175
NDS010105 TO-247-3 1200 140 19 2.6 36 98 175
NDS010065 TO-247-4 1200 140 19 2.6 36 98 175
NDS010071 TO-263-7 1200 140 19 2.6 36 98 175
NDS010125 TO-247-4 750 9 190 2.8 302 652 175
NDS010126 TO-247-4 750 15 125 2.8 117 428 175
NDS010127 TO-247-4 750 23 81 2.8 70 267 175
NDS010128 TO-247-4 750 40 50 2.8 30 187 175
NDS010129 TO-247-4 1200 13 158 2.8 302 652 175
NDS010130 TO-247-4 1200 20 100 2.8 217 517 175
NDS010131 TO-247-4 1700 20 133 2.8 352 714 175
NDS010132 TO-247-4 1700 40 60 2.7 142 357 175
NDS010133 TO-247-4 1700 80 37 2.7 71.2 250 175
NDS010134 TO-263-7 750 15 125 2.8 117 428 175
NDS010135 TO-263-7 750 23 81 2.8 70 267 175
NDS010136 TO-263-7 750 40 50 2.8 30 187 175

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